Low-temperature GaAs grown by molecular-beam epitaxy under high As overpressure: a reflection high-energy electron diffraction study

Reflection high-energy electron diffraction RHEED.was used for in situ monitoring of the growth behavior of GaAs at various temperatures. The growth was performed on both singular and 28 off 001. GaAs substrates. The temperature dependence as well as the AsrGa beam equivalent pressure ratio dependence of the RHEED specular beam intensity oscillation characteristics were studied. Strong RHEED oscillations were observed at low temperatures under AsrGa ratios far from the stoichiometric condition. q1998 Elsevier Science B.V. All rights reserved