Thermal diffusion of Er atoms d-doped in InP

Er s-doped InP samples were investigated by X-ray CTR crystal truncation rod.scattering measurement. The samples were prepared by OMVPE growth at 5308C, and after the growth annealed at 580, 630, and 6508C for 10–240 m. The distribution of Er atoms in InP was analyzed from the measured X-ray CTR spectra, and the diffusion coefficients of Er atoms in InP at 580, 630, and 6508C were obtained to be 1.2, 2.1 and 3.1=10y18 cm2 sy1. Such small diffusion coefficients suggest that Er atoms in InP are substitutional type impurity or form stable micro-crystals in InP. q1998 Elsevier Science B.V. All rights reserved