Kinetics of homoepitaxial growth on GaAs 100/studied by two-component Monte Carlo simulation

Kinetics of MBE growth on vicinal GaAs 100.surfaces is studied based on a Monte Carlo simulation taking account of two components of Ga and As. In order to reproduce RHEED intensity variations during the growth on two different vicinal surfaces, the anisotropic barrier energies for hopping are deduced both for Ga and As. The anisotropic energies for Ga and As, especially those for As, are important for reproducing the transition from a 2D island growth to a step flow growth mode on a vicinal surface 28 misoriented toward thew011xdirection. The oscillatory behavior during the growth is found not only in the surface step density but also in the coverage of the topmost layer species. q1998 Elsevier Science B.V. All rights reserved.