Scanning tunneling microscopy observations of surface structures on ordered GaInAs layers grown on InP

The surface structure of a triple period TP.-A type ordered GaInAs layer grown on InP substrates was observed for the first time by a scanning tunneling microscopy STM.system equipped with a molecular beam epitaxy MBE.facility. The STM image of the surface on the ordered GaInAs layer exhibits white lines running along thew110xdirection. These white lines represent As dimer rows aligned along thew110xdirection, which are adsorbed on the already As-terminated surface. The STM results directly show the existence of a three-fold structure along thew110xdirection on the TP-A type ordered GaInAs layer during MBE growth. q1998 Elsevier Science B.V. All rights reserved