Fabrication of C nanostructures by selective growth on 60 GaSerMoS and InSerMoS heterostructure substrates

C60 molecules were deposited on a submonolayer InSe film which was grown on a MoS2 substrate. In the previous experiment on the growth of a C60 thin film on a GaSerMoS2 heterostructure, C60 grew only on exposed MoS2 regions and never nucleated on GaSe domains at substrate temperature above 1808C. In the present case, however, C60 molecules grow only on InSe domains and do not nucleate on the exposed MoS2 when the substrate temperature is higher than 808C. Using this method, C60 domains whose dimension is smaller than 100 nm could be fabricated on each InSe domain. The selectivity of the C60 growth is supposed to originate not from the surface morphology of those heterostructures, but from the difference in adsorption energy and surface diffusion energy of C60 molecules on the surfaces of three different layered materials and a C60 film. q1998 Elsevier Science B.V. All rights reserved.