Title of article
Optical properties of quantum dots self-formed in GaPrInP short period superlattices grown on GaAs N11/substrates
Author/Authors
S.J. Kim، نويسنده , , H. Asahi، نويسنده , , K. Asami، نويسنده , , Clifford M. Takemoto، نويسنده , , M. Fudeta، نويسنده , , S. Gonda، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1998
Pages
8
From page
729
To page
736
Abstract
Optical properties of multilayer quantum dots MQDs.self-formed in the GaPrInP short period superlattice SL.rInGaP
multilayer structures are investigated by changing SL-period P. and InGaP barrier thickness B.. By decreasing P,
photoluminescence PL. peak energy shifts toward higher energy due to quantum size effect along the growth direction
vertical direction.. PL linewidth broadening with temperature is reduced by decreasing P and B. This improvement is
attributed to the reduction of potential distribution among QDs and the enhancement of quantum confinement along the
vertical direction, and to the enhancement of quantum confinement due to the vertical coupling effect between QDs. Very
small temperature variation of PL peak energy is observed in these MQDs, which is attributed to the existence of the
multiaxial strains in the MQDs. q1998 Elsevier Science B.V. All rights reserved.
Keywords
self-organization , GaPrInP superlattice , PL , TEM , Quantum dot
Journal title
Applied Surface Science
Serial Year
1998
Journal title
Applied Surface Science
Record number
992690
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