Semiconductor nanostructures: a new impact on electronics

After a short introduction into the physics of semiconductor nanostructures and their eventual importance for future nanoand optoelectronics various epitaxy techniques are discussed by which self-assembly of SiGerSi and III–V nanostructures can be achieved. Recent results are reported about the size distribution of Ge and SiGe islands on Si grown in low pressure vapor phase epitaxy LPVPE.. Furthermore correlated growth of Ge islands on adjacent stacked Si layers is described and explained quantitatively. Quantum wires QWR.can be grown in a well defined way within lithographically pre-structured grooves. The underlying physics and some details of the growth mechanism are considered both for the SiGerSi and for III–V material systems. Finally some examples are reported where both SiGe and III–V nanostructures are used in preliminary device structures such as optoelectronic devices with quantum dots in the active region, single electron tunneling diodes based on quantum dots as well as magnetotransport measurements on GaAs quantum wires. q1998 Elsevier Science B.V. All rights reserved.