Fabrication and characterization of field effect transistors using donor and acceptor stacked layers

We fabricated field-effect transistors FETs.using donor TMTSF.and acceptor TCNQ.stacked layers, and we investigated the change of conductivity in the charge transfer CT.complex layer by applying gate voltages. Two types of FETs having TMTSFrTCNQ and TCNQrTMTSF structures are examined. The stacked-layer FET shows a large transconductance compared with a single-layer FET. The experimental results demonstrate that the CT complex layer formed between donor and acceptor films mainly works as a conduction channel. Furthermore, the change in the degree of charge transfer corresponding to conductivity change.is confirmed by infrared absorption spectra. q1998 Elsevier Science B.V. All rights reserved.