Title of article :
Electroluminescent SiO2/Si superlattices prepared by low pressure chemical vapour deposition
Author/Authors :
L Heikkil?، نويسنده , , T Kuusela، نويسنده , , H.-P Hedman، نويسنده , , H Ihantola، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 1998
Pages :
5
From page :
84
To page :
88
Abstract :
SiO2/Si superlattices were fabricated by low pressure chemical vapour deposition. Superlattices of 1–6 nm in layer thickness and having 1–60 layer pairs were investigated in order to evaluate their surface structure and electroluminescent properties. The atomic force microscope (AFM) studies are presented for investigation of surface morphology, and the transmission electron microscope (TEM) analysis for revealing layer structure. The current–voltage characteristics and the electroluminescence spectrum are also shown. The experimental results show that the superlattices prepared by chemical vapour deposition can emit visible light when the forward bias voltage exceeded 6 V.
Keywords :
Electroluminescence , Chemical vapour deposition , Silicon , Superlattice
Journal title :
Applied Surface Science
Serial Year :
1998
Journal title :
Applied Surface Science
Record number :
992734
Link To Document :
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