Title of article
On the segregation of metals during low-energy oxygen bombardment of silicon
Author/Authors
Mladen Petravi?، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1998
Pages
5
From page
200
To page
204
Abstract
Segregation of metal impurities in Si under oxygen ion bombardment has been studied using secondary ion mass spectrometry. A strong evidence has been found for the thermodynamic driving force for segregation. This includes segregation of metal atoms at both interfaces of a buried SiO2 layer and the `antisegregationʹ behaviour of metal atoms having lower heats of oxide formation than Si. Segregation is enhanced at elevated temperatures when the metal diffusivity in amorphous Si is higher.
Keywords
Silicon oxides , Metal oxides , Surface segregation , Compound formation , Secondary ion mass spectroscopy
Journal title
Applied Surface Science
Serial Year
1998
Journal title
Applied Surface Science
Record number
992826
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