Utilisation of Cu hfac/tmvs precursor gas in LCVD integrated circuit repair system

Various techniques have been developed to carry out integrated circuit repairs during IC prototyping. Focused ion beam FIB.etching and deposition is, for the time being, the most powerful and versatile tool for multilevel IC modification and failure analysis but a long distance conductor line deposition with an acceptable electrical resistance is time consuming. Laser chemical vapor deposition LCVD.does not have such a high accuracy but the bulk resistivity metal deposition over large areas and long distances is carried out in seconds. In this work LCVD, of copper from Cu hcfac.tmvs is shown to be applicable for actual integrated circuit repair work in special cases. During Cu deposition the precursor container was heated to a temperature of 398C resulting in 0.33 mbar partial pressure in the chamber. A typical flow rate of hydrogen carrier gas and Cu hfac.tmvs precursor was set to 2.0 sccm and the total pressure in the chamber was adjusted between 5 to 10 mbar. An Arq laser, employing mainly the peaks at 488 nm and 515 nm, was utilised with a scan speed of 24 mmrs. The resistivity of the deposited lines was found to be 2.7 mV cm. Examples including long distance signal rewires, probing and bonding pad copper deposition are presented in this paper. The deposition morphology and chemical contents of the deposited lines are studied by AFM and LIMA measurements. q1999 Elsevier Science B.V. All rights reserved.