Unusual growth of pulsed laser deposited bismuth films on Si 100/

Pulsed laser deposition of bismuth films was performed from a Nd:YAG laser ls532 nm.in a high vacuum chamber onto glass or Si 100.substrates. The influences of deposition temperature and deposition duration on the film growth were checked on both substrates. The films were characterised by scanning electron microscopy, transmission electron microscopy, atomic force microscopy and X-ray diffraction. Unusual growth was observed at the beginning of the process with films deposited on Si 100.at low and high temperature as compared to glass and also to more conventional deposition techniques. The strong texture observed for room temperature deposited films and the increase of rate growth as compared with glass are discussed in terms of epitaxial growth. q1999 Elsevier Science B.V. All rights reserved.