The use of liquid precursors in plasmachemical technology of obtaining a-SiC:H thin films

The analysis of experimental data has shown promise of our technological approach in obtaining hydrogenated amorphous silicon carbide films a-SiC:H.. The a-SiC:H films have been received by a plasmachemical decomposition of CH3SiCl3steams, in the plasma of radio frequency RF.-discharge. The negative potential is supplied on a substrate. For obtaining n-conductivity, the nitrogen was added in a gas mixture. For p-conductivity, BCl3 steams were entered which were decomposed in the plasma. On the basis of the theoretical calculation of a-SiC by the recursion method of Haydock, it suggested the mechanism of influence of amorphouzation and hydrogenation on the electronic structure of the silicon carbide that is necessary for understanding the physics of the process of hydrogenation of amorphous thin films. q1999 Elsevier Science B.V. All rights reserved