DUV laser-induced deposition of a-C:H from CH I at room 2 2 temperature

Amorphous carbon films have been deposited at room temperature by photolytic dissociation of CH2I2. An Arq cw laser operating at 275–305 nm DUV.was used as the excitation source. The laser beam was focused parallel to the Si 100. substrate surface. The deposition process was investigated as a function of laser power, gas flow rate, laser-beam-to-substrate distance and gas pressure. The deposits were analysed by micro Raman spectroscopy, atomic force microscopy, energy dispersive X-ray spectroscopy and elastic recoil detection analysis. q1999 Elsevier Science B.V. All rights reserved.