Title of article :
CVD of silicon and silicides on iron
Author/Authors :
M. Rebhan )، نويسنده , , M. Rohwerder، نويسنده , , M. Stratmann، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 1999
Pages :
7
From page :
99
To page :
105
Abstract :
Silicon and iron silicides are promising candidates as adhesion promoters on iron. The formation of silicon and iron silicides films on polycrystalline iron is studied in a CVD process with monosilane. The process is performed between 4758C and 8008C with a silane partial pressure of 0.2 to 10 mbar to a total pressure of the silane–hydrogen mixture of 100 to 990 mbar. A model of the reaction mechanism is presented which includes the transport of the gases, the adsorption on the surface, the chemical decomposition of the silane and the interdiffusion between Si and Fe. q1999 Elsevier Science B.V. All rights reserved.
Keywords :
Silicon , Iron silicides , CVD process
Journal title :
Applied Surface Science
Serial Year :
1999
Journal title :
Applied Surface Science
Record number :
995156
Link To Document :
بازگشت