Segregation of Ce in Ca Sr Ga S :Ce thin films during 0.55 0.45 2 4 annealing

Surface and interfacial segregation of cerium in sputter-deposited Ca0.55Sr0.45Ga2S4:Ce thiogallate.films during annealing between 5508C and 7508C has been studied. Composition vs. depth of the thiogallate thin films was determined using secondary ion mass spectrometry SIMS.and microstructure was examined using transmission electron microscopy TEM.. Cerium segregation to the ambientrthiogallate surface was driven by oxide formation, while segregation to the thiogallaterinsulator was driven by formation of a Ce–Zn–O–S quaternary phase. q1999 Elsevier Science B.V. All rights reserved.