Title of article :
Simultaneous imaging of the In and As sublattice on
InAs 110/- 1=1/with dynamic scanning force microscopy
Author/Authors :
A. Schwarz )، نويسنده , , W. Allers )، نويسنده , , U.D. Schwarz، نويسنده , , A. Kubetzka and R. Wiesendanger، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 1999
Abstract :
Distance-dependent dynamic scanning force microscopy SFM.measurements of InAs 110.- 1=1.acquired in ultrahigh
vacuum at low temperatures are presented. On this surface, the atoms of the As sublattice are lifted by 80 pm with respect to
the In sublattice and terminate the surface. Thus, since in most dynamic SFM images only protrusions with the periodicity of
one sublattice are observed, these protrusions are correlated with the positions of the As atoms. However, under certain
conditions, an additional contrast is visible which can be attributed to an interaction between the foremost tip atoms and the
In atoms. Possible contrast mechanisms are discussed in terms of tip–sample distance and tip structure. q1999 Elsevier
Science B.V. All rights reserved
Keywords :
Low temperature scanning forcemicroscopy , surface structure , InAs 110. , Dynamic scanning force microscopy , III–V-semiconductor
Journal title :
Applied Surface Science
Journal title :
Applied Surface Science