Integration of platinum bottom electrode on poly-Si for ferroelectric thin films

Platinum bottom electrodes are integrated directly on poly-Si by metalorganic chemical vapor deposition MOCVD.and dc sputtering. Platinum films deposited directly on poly-Si by MOCVD at 4008C do not form platinum-silicide after annealing at 7008C in oxygen ambient. On the other hand, Pt films deposited on poly-Si at 3508C by dc sputtering were changed to form platinum-silicide at 7008C. Pt films deposited on poly-Si by MOCVD effectively prevent the diffusion of oxygen and silicon at high temperatures in oxygen ambient. MOCVD-Pt films for integration directly on poly-Si are potentially attractive for the ferroelectric random access memory FRAM.application. q1999 Elsevier Science B.V. All rights reserved.