Title of article :
Study of PbSe layer oxidation and oxide dissolution
Author/Authors :
C. Gautier )، نويسنده , , M. Cambon-Muller، نويسنده , , M. Averous، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 1999
Abstract :
The presence of contamination at the Pbrp-PbSe interface corresponding to a Schottky contact leads to the formation of
an n-type inversion layer resulting in an ohmic behaviour. In this work, the PbSe oxidation kinetics by air exposure is
studied using XPS and AES measurements. We found that an oxide layer is formed at the surface, containing PbO and SeO2
compounds. Secondly, the oxide layer dissolution in KOH-based solutions is investigated. A C- and O-decontaminated PbSe
surface is obtained after a few minutes soaking in a bath containing ethylene glycol as solvent. Auger microanalysis
demonstrates that the decontaminated surface is made of Pb Se with x-1, corresponding to a lead deficit. The surface x
morphology does not appear to be modified, as seen by AFM, but the root mean square roughness calculation shows a weak
improvement. q1999 Elsevier Science B.V. All rights reserved.
Keywords :
Dissolution , XPS , KOH , oxide , AES , PbSe
Journal title :
Applied Surface Science
Journal title :
Applied Surface Science