Title of article :
Oxygen effect on the conductivity of the Cu OrZnO 0001/and x 0001/systems
Author/Authors :
P.J. M?ller، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 1999
Pages :
5
From page :
210
To page :
214
Abstract :
Thin copper oxide film formation on the polar ZnO 0001.and ZnO 0001.surfaces under ultra-high vacuum conditions was monitored by LEED, Auger, TCS and work-function measurements. The 2.5 nm thick discontinuous oxide films contained a mixture of CuO, Cu2O and ZnO. The effect of oxygen gas on the conductivity of the thin films has been measured, and a more pronounced increase of a relative resistance of the film is observed in the temperature range 400–500 K. q1999 Elsevier Science B.V. All rights reserved
Keywords :
Semiconductor–semiconductor interfaces , zinc oxide , Surface electronic phenomena , Conductivity , Copper oxides
Journal title :
Applied Surface Science
Serial Year :
1999
Journal title :
Applied Surface Science
Record number :
995294
Link To Document :
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