Title of article :
Enhancement of C-49 to C-54 TiSi phase transformation on 2
001/Si with an ultrathin TiN seed layer
Author/Authors :
Y.C. Peng، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 1999
Abstract :
An ultrathin TiN seed layer was used to reduce the transformation temperature of C-49 to C-54 TiSi2. The fine-grained
structure of C-49 TiSi2 was induced by the interposing TiN layer. Since C-54 TiSi2 nucleated more easily at the grain
boundaries of fine-grained C-49 structure, the phase transformation temperature was reduced. q1999 Elsevier Science B.V.
All rights reserved.
Keywords :
C-54 TiSi2 , Phase transformation temperature , Fine-grained structure , Interposing TiN layer , C-49 TiSi2
Journal title :
Applied Surface Science
Journal title :
Applied Surface Science