Title of article :
Growth of Ga In As Sb solid solutions from the 1yx x y 1yy
five-component Ga–In–As–Sb–Pb melt by liquid phase epitaxy
Author/Authors :
E.V. Kunitsyna )، نويسنده , , I.A. Andreev، نويسنده , , N.A. Charykov، نويسنده , , Yu.V. Solov’ev، نويسنده , , Yu.P. Yakovlev، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 1999
Abstract :
Gallium antimonide GaSb.and its solid solutions are widely used in optoelectronic devices for the ecologically
important spectral range 2–5 mm. In this paper we discuss a novel approach of using neutral solvents such as Pb.in
GaInAsSb growth process. We employed the excess thermodynamic functions and linear combinations of chemical
potentials EFLCP.thermodynamic model to calculate the melt–solid phase diagrams in the Ga–In–As–Sb–Pb system.
q1999 Elsevier Science B.V. All rights reserved.
Keywords :
EFLCP thermodynamic model , Ga1yxInxAsySb1yx , Ga–In–As–Sb–Pb system , Gibbs energy
Journal title :
Applied Surface Science
Journal title :
Applied Surface Science