Growth of aluminum on Si using dimethyl-ethyl amine alane

The paper describes growth of aluminum on a hydrogen terminated Si 100.surface using dimethyl-ethyl amine alane. The growth rate depends on the substrate temperature with an activation energy of 0.56 eV at the temperature ranging from 150 to 2508C. Selective growth of Al into 1.5-mm diameter via-holes is successfully demonstrated at the substrate temperature of 1508C. In situ FTIR measurements suggest that growth of Al occurs by the chemical reaction between AlH3 and a hydrogen terminated Si surface. q1999 Elsevier Science B.V. All rights reserved