Epitaxial growth of InAs P rInP quantum wells by HVPE

Hydride vapor phase epitaxy HVPE.is used nowadays for the growth of new III–V semiconductors GaN, InGaN . . .., as well as for the selective epitaxy of III–V layers on patterned III–V wE.R. Messmer et al., Materials Science and Engineering B51 1998., pp. 238–241xor siliconwO. Parillaud, E. Gil-Lafon, B. Gerard, P. Etienne, D. Pribat, Appl. Phys. Lett. 68 1996., pp. 2654–2656x substrates. It has already been demonstrated that InAsrInP strained quantum wells wH. Banvillet, E. Gil-Lafon, R. Cadoret, P. Disseix, K. Ferdjani, A. Vasson, A.M. Vasson, A. Tabata, T. Benyattou, G. Guillot, J. Appl. Phys. 70 3. 1991, pp. 1638–1641.xand InGaAsrInP quantum wellswN. Piffault, E. Gil, J. Leymarie, S.A. Clark, M. Anderson, R. Cadoret, A. Vasson, A.M. Vasson, J. Crystal Growth 135 1994., pp. 11–22.x could be achieved by HVPE. We will present here the study of the growth of InAsPrInP strained quantum wells by HVPE. Relaxed InAsP layers were first grown in order to determine the composition of the alloys. Single quantum wells and multi-quantum well structures were then achieved. Photoluminescence analysis of the samples have shown the high quality of the InAsPrInP quantum wells. The feasibility of low dimensionality structures using HVPE process was then demonstrated, with an accurate control of the thickness and the composition of InAsPrInP quantum wells. q1999 Elsevier Science B.V. All rights reserved.