Title of article :
Interface formation of Ag and Au with InP 001/2=4:
a photoemission study
Author/Authors :
S. Sloboshanin، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 1999
Abstract :
Interface formation and growth of silver on an IBA prepared indium-phosphide- 001.2=4 surface was studied by
photoelectron spectroscopy at room temperature and at 110 K. Sequences of angle resolved core-level and valence-band
spectra of substrate and ad-metal were recorded in the 0.05–10 ML coverage regime. Analysis of the change of shape of
spectra rendered information on ad-layer growth mode and composition. Results for AgrInP from this study are compared
to those of a corresponding study on AurInP, performed under identical conditions as presented in a previous paper: both
metals are found to behave in the same way at low temperature, forming a closed layer on the substrate with minute
admixture of indium. At room temperature, however, silver shows island growth from the beginning while gold is growing
in islands on an intermixed layer. There is substrate disrupture and indium admixture in both cases; gold turns out to be the
more reactive metal; a model calculation of reaction enthalpies is in line with this result. q1999 Elsevier Science B.V. All
rights reserved
Keywords :
Gold , Surface segregation , Ultravioletphotoelectron spectroscopy , Metal–semiconductor interfaces , Surface chemical reaction , Indium phosphide , Silver
Journal title :
Applied Surface Science
Journal title :
Applied Surface Science