Title of article :
Molecular dynamics simulation of the isotopic mass effect in zero-fluence and low-bombarding-energy sputtering
Author/Authors :
Li-Ping Zheng، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 1999
Pages :
4
From page :
215
To page :
218
Abstract :
Nonstoichiometric effects in the zero-fluence sputtering of a natural Cu 111.target 69.1% 63Cu, 30.9% 65Cu. irradiated with normally incident Arq ions from 50 to 1000 eV have been studied by use of a molecular dynamics MD.simulation code. Calculations show that the isotopic ratios in the normal direction and at oblique angles, their difference, and the total isotopic ratio increase as the bombarding energy decreases. q1999 Elsevier Science B.V. All rights reserved
Keywords :
Molecular dynamics simulation , Isotopic mass effect , Zero-fluence , Low-bombarding-energy sputtering
Journal title :
Applied Surface Science
Serial Year :
1999
Journal title :
Applied Surface Science
Record number :
995404
Link To Document :
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