The DC characteristics of anisotype heterojunction in the presence of interface states and series resistance

The current–voltage and conductance–voltage characteristics of an anisotype heterojunction have been studied considering the presence of interface states and series resistance. An expression for the diode ideality factor of the device has been proposed. The temperature dependence of the diode ideality factor and the activation energy plot of these devices have been evaluated. The experimental activation energy plot and the temperature dependence of the ideality factor of Ge–GaAs heterojunction reported by Unlu et al. wM.S. Unlu, S. Strite, G.B. Gao, K. Adomi, H. Morkoc, Appl. Phys. Lett. 56 1990. 842x have been compared with the theory. q1999 Elsevier Science B.V. All rights reserved