Elastic scattering of Si 2p photoelectrons in silicon oxide

The cross-sections for elastic and inelastic scattering of Si 2p photoelectrons in silicon oxide were uniquely determined from the analysis of oxidation-induced changes in Si 2p photoelectron diffraction patterns arising from single crystalline Si substrate under the assumption that the structure of hydrogen-terminated Si substrate does not change by the oxidation. It was found from the Monte Carlo calculation of path of elastically and inelastically scattered Si 2p photoelectrons for the simulation of oxidation-induced changes in photoelectron diffraction patterns that the total elastic scattering cross-section and the inelastic scattering cross-section are 1.54=10y20 and 1.26=10y20 m2, respectively. q1999 Published by Elsevier Science B.V. All rights reserved.