Characterization of rapid thermal processing oxynitrides by SIMS and XPS analyses

Aim of this work is the characterisation of oxynitride films grown by rapid thermal processing RTP.using nitrous oxide and nitric oxide precursors. The thickness of the oxynitrided layers is about 7 nm. Secondary ion mass spectrometry SIMS. and X-ray photoemission spectroscopy XPS.have been employed to obtain a complete chemical characterisation. XPS analyses have been performed at different depths after removal of oxynitride layers by chemical etching. SIMS and XPS analyses have been performed on the same samples after a reoxidation treatment as well. Depending on the precursors used, the oxynitrides show different characteristics. q1999 Elsevier Science B.V. All rights reserved