Route for controlled growth of ultrathin polyimide films with Si–C bonding to Si 100/-2=1

In this high resolution electron energy loss spectroscopy study, we demonstrate the growth of an ultrathin polyimide film on Si 100.-2=1 exhibiting Si–C bonds at the organic filmrsubstrate interface. For the controlled formation of the film, which has been carried out by molecular deposition, maleic anhydride, 1,4-phenylene diamine and pyromellitic dianhydride have been sequentially deposited on Si 100.-2=1 at room temperature. Imidisation was initiated by thermally curing the amic acid film at 4308C. The vibrational data confirm the absence of oxidised silicon at the filmrsubstrate interface. q1999 Elsevier Science B.V. All rights reserved