Title of article :
Formation of pyramids at surface of TMAH etched silicon
Author/Authors :
W.K. Choi )، نويسنده , , J.T.L. Thong، نويسنده , , P. Luo، نويسنده , , Y. Bai، نويسنده , , C.M. Tan، نويسنده , , T.H. Chua، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 1999
Abstract :
An investigation on the influence of etchant concentration and ambient temperature on the formation of pyramids arising
from the TMAH etching of silicon has been carried out. The number and size of the pyramids were used as parameters for
the investigation. From the results obtained from this study, we are able to explain the influence of the TMAH concentration
and ambient temperature on the changes occurring at the silicon surface satisfactorily using the pH theory. q1999 Elsevier
Science B.V. All rights reserved
Keywords :
Etching parameters , Silicon , Tetramethylammonium hydroxide TMAH. , pyramids
Journal title :
Applied Surface Science
Journal title :
Applied Surface Science
