Submonolayer growth of Co on H-passivated Si 100/surfaces and nanoscale metallization with Co on patterned H–Si 100/

Nucleation and growth of submonolayer Co coverage on H-passivated Si 100. surfaces was studied in situ by UHV-STM. Non-epitaxial Co islands are formed after room temperature deposition of Co on H–Si 100.; the island number density grows with Co coverage in agreement with predictions of an isotropic two-dimensional random walker. Moreover, the fabrication of Co-silicide nanowires width -10 nm.was explored by STM nanolithography on H–Si 100. and subsequent Co deposition. The room temperature wires appeared granular, while those annealed at 683 K showed a more compact structure. q1999 Elsevier Science B.V. All rights reserved