Title of article :
Sample illumination facility for slow positron beam studies and
its application to the photoionization cross-section of the DX
center in Al Ga As
Author/Authors :
J. Oila )، نويسنده , , T. LAINE، نويسنده , , J. Nissil¨a، نويسنده , , K. Fallstro¨m )، نويسنده , , K. Saarinen، نويسنده , , P. Hautoj¨arvi، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 1999
Abstract :
We have built a sample illumination facility for slow positron beam studies. It enables the illumination of the sample with
monochromatic light in visible and near-IR wavelength range with the maximum photon flux of 1013–1015 sy1 cmy2. Light
is guided from the monochromator into the vacuum chamber by an optical fibre bundle and focused onto the sample with a
mirror and a lens. We have applied the new illumination facility in studying the photoionization cross-section of the DX
center in AlGaAs. The measurements were done using photon energies in the range of 1.0–1.6 eV and the cross-sections
were calculated from the behaviour of the positron annihilation parameters as a function of the photon fluence. The resulting
photoionization cross-sections were found to coincide well with the results from the photo-capacitance measurements.
q1999 Elsevier Science B.V. All rights reserved
Keywords :
Positron annihilation , Sample illumination , Al xGa1yx As , semiconductors , DX center
Journal title :
Applied Surface Science
Journal title :
Applied Surface Science