Optimization of In O transparent conductive films by Ge ion 2 3 implantation

In2O3 films with good structural electrical and optical properties have been grown by indium reactive evaporation in partial oxygen atmosphere. After deposition, these films are doped by Ge ion implantation. It is shown that ion implantation disturbs the surface of the films and their structural, optical and electrical properties. An annealing of half an hour at 673 K in argon atmosphere restores the initial structural and optical properties. It is shown that if the carrier density is increased after doping 7=1020 cmy3before, 2.78=1021 cmy3 after., their mobility is decreased 20.33 V cm2rs before, 8.45 V cm2rs after.. The conductivity of the films being controlled by ionized impurity scattering, the mobility of the films varies inversely with the ionized impurity density, which induces an optimum doping concentration, the only way to improve the mobility significantly is to improve the crystalline properties of the films before implantation. About the Ge effect, the difference between the results obtained in the present work and those obtained by other authors is explained by the difference in the doping process. q1999 Elsevier Science B.V. All rights reserved.