Title of article
Ultraviolet annealing of thin films grown by pulsed laser deposition
Author/Authors
Junying Zhang، نويسنده , , Ian W. Boyd، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2000
Pages
5
From page
17
To page
21
Abstract
In this paper, we report the results of ultraviolet UV.annealing of tantalum oxide and tantalum films deposited on Si
100.and quartz by pulsed laser deposition PLD.. The effects of annealing pressure and time on the structural and optical
properties have been studied. Ellipsometry was used to determine the refractive index and thickness of the films, while
Fourier transform infrared spectroscopy FTIR.and UV spectrophotometry were used to identify tantalum pentoxide
Ta2O5.formation and determine the optical band gap and transmittance. The FTIR and UV spectra reveal a strong
dependence of the film properties on the annealing parameters used with pressure being the most sensitive. Under optimum
annealing conditions, the refractive index of the layers was found to be around 2.18 which is close to the value of the bulk
Ta2O5 of 2.2, while an optical band gap of 4.2 eV and an optical transmittance in the visible region of the spectrum greater
than 85% were obtained, which compare very favourably with films produced by other techniques. q2000 Published by
Elsevier Science B.V. All rights reserved.
Keywords
UV annealing , Pulsed laser deposition , growth , Excimer lamp , Thin Ta2O5 film
Journal title
Applied Surface Science
Serial Year
2000
Journal title
Applied Surface Science
Record number
995888
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