Title of article :
Electrical behaviour of HgCdTerSi heterostructures
Author/Authors :
T.Ya. Gorbach، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2000
Abstract :
HgCdTerSi heterostructures HSs.were obtained by pulsed laser deposition PLD.on Si p- or n-type.flat and patterned
pyramid-like and plate-like.substrate from p- or n-type HgCdTe target. The I–V characteristics of p–n and isotype HSs
were investigated by the differential approach. This approach is based on monitoring of differential slope a of the I–V
characteristics in log–log plot asd lgIrd lgV.. Influence of the substrate kind flat, pyramid-like or plate-like., type of
conductivity, type of HS p–n or isotype.and substrate resistivity were studied. In all cases, the main feature of the I–V
characteristics behaviour was as3r2. It means that the bimolecular recombination is the main recombination mechanism
in all HSs types. q2000 Elsevier Science B.V. All rights reserved
Keywords :
Differential slope , injection , Recombination1. IntroductionHg Cd TerSi heterostructure HS.technology 1yx xis a promising one for infrared optoelectronics. However , there are many problems to produce such structureswith appropriate properties. To overcome thebig lattice mismatch about 20%.and difference in) Corresponding author. Tel.: q38-44-2656477 , fax: q38-44-2658342.E-mail address: smertenk@class.semicond.kiev.ua P.S.Smertenko.. , HgCdTerSi heterostructure , Patterned Si substrate , I–V characteristic
Journal title :
Applied Surface Science
Journal title :
Applied Surface Science
