Abstract :
A perennial question is ‘‘what is the future of high-resolution lithography, a key technology that drives the semiconductor
industry’’? The dominant technology over the last 30 years has been optical lithography, which by lowering wavelengths
to 193 nm ArF.and 157 nm F2.and by using optical ‘‘tricks’’ such as phase shift masks, off-axis illumination and phase
filters, should be capable of 100 nm CMOS technology. So where does this leave the competition? The 100-nm lithography
used to be the domain of electron beam lithography but only in research laboratories. Significant efforts are being made to
increase throughput by electron projection scattering with angular limitation projection electron beam lithography or
SCALPEL.. X-ray lithography remains a demonstrated R&D tool waiting to be commercially exploited but the initial
expenditure to do so is very high. Ion beam lithography and extreme ultraviolet EUV. l-12 nm.have also received
attention in recent years. This paper will concentrate on some of the key issues and speculate on how and when an
alternative to optical lithography will be embraced by industry. q2000 Published by Elsevier Science B.V. All rights
reserved
