Title of article :
Measurements and analysis of surface potential change during
wear of single-crystal silicon 100/ at ultralow loads using Kelvin
probe microscopy
Author/Authors :
Bharat Bhushan، نويسنده , , Anton V. Goldade، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2000
Abstract :
The change in surface potential resulting from wear at ultralow loads using Kelvin probe microscopy is studied. Samples
studied include single-crystal silicon 100., single-crystal silicon 100. lubricated with fully bonded Z-DOL a perfluo-
ropolyether.. The effects of relative humidity RH. as well as that of load and number of cycles during wear on the change
in surface potential have been investigated. It is believed that the removal of either contaminant layer, natural oxide layer or
lubricant during few wear cycles gives rise to the initial change in surface potential. As the number of cycles andror load
increases, the material is removed from the silicon surface by subsurface fatigue wear and stresses beneath the silicon
surface resulting in subsurface structural changes which are responsible for further change in the surface potential. q2000
Elsevier Science B.V. All rights reserved
Keywords :
single-crystal silicon , Wear , Surface potential , Kelvin probe microscopy
Journal title :
Applied Surface Science
Journal title :
Applied Surface Science