• Title of article

    Measurements and analysis of surface potential change during wear of single-crystal silicon 100/ at ultralow loads using Kelvin probe microscopy

  • Author/Authors

    Bharat Bhushan، نويسنده , , Anton V. Goldade، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2000
  • Pages
    9
  • From page
    373
  • To page
    381
  • Abstract
    The change in surface potential resulting from wear at ultralow loads using Kelvin probe microscopy is studied. Samples studied include single-crystal silicon 100., single-crystal silicon 100. lubricated with fully bonded Z-DOL a perfluo- ropolyether.. The effects of relative humidity RH. as well as that of load and number of cycles during wear on the change in surface potential have been investigated. It is believed that the removal of either contaminant layer, natural oxide layer or lubricant during few wear cycles gives rise to the initial change in surface potential. As the number of cycles andror load increases, the material is removed from the silicon surface by subsurface fatigue wear and stresses beneath the silicon surface resulting in subsurface structural changes which are responsible for further change in the surface potential. q2000 Elsevier Science B.V. All rights reserved
  • Keywords
    single-crystal silicon , Wear , Surface potential , Kelvin probe microscopy
  • Journal title
    Applied Surface Science
  • Serial Year
    2000
  • Journal title
    Applied Surface Science
  • Record number

    996082