Title of article
Growth of CuS thin films by the successive ionic layer adsorption and reaction method
Author/Authors
Seppo Lindroos، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2000
Pages
6
From page
75
To page
80
Abstract
The growth of copper sulfide thin films by the successive ionic layer adsorption and reaction SILAR.method at room
temperature and normal pressure was studied. The CuS films were characterized by chemical analysis, XRD, SEM and UV
spectroscopy. The growth rate of CuS was proportional to copper precursor concentration. The films were polycrystalline
and showed no preferred orientation. The surface of the CuS thin films was rough compared with CdS films, which were
used as buffer layer on ITO and glass substrates to enhance the weak adhesion of CuS to oxide surfaces. q2000 Elsevier
Science B.V. All rights reserved
Keywords
Thin film , CuS , SILAR method , SEM , XRD
Journal title
Applied Surface Science
Serial Year
2000
Journal title
Applied Surface Science
Record number
996099
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