Hydrogenation of GaAs-on-Si Schottky diodes by PH -added H 3 2 plasma

The surface phosphidization and bulk hydrogenation for GaAs on Si has been realized simultaneously using the phosphine PH3.-added H2 plasma-exposure schemes. The PH3rH2 plasma-exposed GaAs Schottky diodes showed significant increase in reverse breakdown voltage Vbr., which was believed to be due to the deactivation of dislocation-re- lated deep levels. By the incorporation of phosphorous P. atoms, the plasma-induced damages were effectively suppressed, and the passivated GaAs Schottky diodes on Si showed a good thermal stability. q2000 Elsevier Science B.V. All rights reserved