Title of article
Hydrogenation of GaAs-on-Si Schottky diodes by PH -added H 3 2 plasma
Author/Authors
G. Wang، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2000
Pages
6
From page
191
To page
196
Abstract
The surface phosphidization and bulk hydrogenation for GaAs on Si has been realized simultaneously using the
phosphine PH3.-added H2 plasma-exposure schemes. The PH3rH2 plasma-exposed GaAs Schottky diodes showed
significant increase in reverse breakdown voltage Vbr., which was believed to be due to the deactivation of dislocation-re-
lated deep levels. By the incorporation of phosphorous P. atoms, the plasma-induced damages were effectively suppressed,
and the passivated GaAs Schottky diodes on Si showed a good thermal stability. q2000 Elsevier Science B.V. All rights
reserved
Keywords
hydrogenation , Phosphidization , GaAs-on-Si Schottky diode , defect , damage
Journal title
Applied Surface Science
Serial Year
2000
Journal title
Applied Surface Science
Record number
996170
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