Title of article :
Study of sublattice inversion in GaAsrGerGaAs 001/ crystal by
X-ray diffraction
Author/Authors :
Shinichiro Nakatani، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2000
Abstract :
The structures of GaAsrGerGaAs 001.crystals designed for prototypes of nonlinear optical devices were investigated
by X-ray diffraction XRD.. The intensity distribution of crystal truncation rod CTR.scattering showed that the quality of
GaAs epitaxial layers is good. The results of X-ray standing wave XSW.measurements clearly indicated that the 908
rotation of the epitaxial layers, which is a necessary condition for the phase matching, occurs. q2000 Elsevier Science B.V.
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Keywords :
GaAsrGerGaAs , Sublattice inversion , Nonlinear optical device , Quasi-phase matching , X-ray diffraction , X-ray standing wave
Journal title :
Applied Surface Science
Journal title :
Applied Surface Science
