Title of article :
Quantum chemical mechanism of oxidation of the
hydrogen-terminated Si surface by oxygen anion
Author/Authors :
Ken Sakata، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2000
Abstract :
The total electronic energies of the hydrogen-terminated Si surface with various oxygen species are calculated to study
the oxidation process of the Si surface. It is shown that the oxygen anion adheres to the surface the most strongly. q2000
Elsevier Science B.V. All rights reserved
Keywords :
Hydrogen-termination , Film growth , First principle calculation , Oxygen anion
Journal title :
Applied Surface Science
Journal title :
Applied Surface Science
