Abstract :
We studied by X-ray photoelectron spectroscopy XPS.and high-resolution transmission electron microscopy HRTEM.
films of Co–Nirp-Si deposited by PLD on Si 100.substrates. They were thermally treated in vacuum to promote silicide
formation. By means of XPS in-depth profiles, it was observed that the deposited metal film contains more Co than Ni. The
Co and Ni 2p transitions present shifts characteristic of silicide at respective ranges of 778.3–778.6 and 853.2–853.6 eV,
while the Si2p transition appears at 99.2–99.5 eV, as determined by XPS. By means of HRTEM, nanocrystalline regions
belonging to CoSi2, Ni2Si and NiSi2structures were identified. Some grains of CoSi2are large in size, more than 20 nm in
diameter, while Ni2Si and NiSi2nanocrystals are of the order of 10 nm. There are several regions where no crystalline
ordering seems to be apparent. The SiO2 layer acted as an effective diffusion barrier suppressing mobility of metal into the
Si 100.substrate. The observed tendencies of the Co and Ni concentrations as a function of depth agree with a model of
CoSi and NiSi structure separation and subsequent formation of CoSi2and NiSi2. q2000 Elsevier Science B.V. All rights
reserved.
