Fabrication and characterization of metalrGaN contacts

In this paper, the formation of ohmic contacts to n-GaN using Al, TirAl and TirAu has been investigated. n-GaN TirAl contacts showed the lowest specific contact resistance after annealing at 9008C for 30 s. For p-GaN, NirAu contacts were studied. A lowering of sheet resistance upon annealing in the case of n-GaN and an increase for p-GaN might be attributed to formation of N-vacancy. No native oxide was detected on GaN surface by XPS. q2000 Elsevier Science B.V. All rights reserved