SILAR deposition of Cd Zn S thin films

Cd Zn S thin films were grown on 100.GaAs by the successive ionic layer adsorption and reaction SILAR. x 1yx technique from dilute aqueous precursor solutions. Crystallinity, refractive index and morphology of the thin films were studied as a function of composition and thickness of the films. The Cd Zn S films were polycrystalline and cubic. The x 1yx crystallite size and refractive index of the films increased when the film thickness and Cd concentration in the Cd Zn S x 1yx thin films increased. It was found that tensile stress dominates in thin films when Cd concentration is lower than xF0.54 and the change of the residual stress to the compressive one takes place after that. Correlation between the growth mode and residual stress is demonstrated. q2000 Elsevier Science B.V. All rights reserved.