Title of article :
Si H adsorption and hydrogen desorption on Si 100/ 2 6 investigated by infrared spectroscopy
Author/Authors :
Michio Niwano and Nobuo Miyamoto، نويسنده , , Masanori Shinohara، نويسنده , , Yoichiro Neo )، نويسنده , , Kuniyoshi Yokoo، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2000
Pages :
5
From page :
111
To page :
115
Abstract :
The adsorption and decomposition of disilane on Si 100. 2=1.was investigated using in-situ infrared IR.absorption spectroscopy. The IR data demonstrate that upon room-temperature adsorption, disilane dissociatively adsorbs on the unsaturated dangling bonds of dimers with the dimer bonds unbroken, to produce mono-, di-, and tri-hydride species. At low coverages, dissociative adsorption without breaking of the Si`Si bond of Si2H6 is favored. Thermal annealing following room-temperature disilane adsorption produces the doubly-occupied adatom dimers DOD, HSi`SiH.and isolated monohydride species. These hydride species are generated via the rupture of dimer bonds of the substrate. Hydrogen desorption from the isolated monohydride site occurs at lower temperatures than from the DOD site. q2000 Elsevier Science B.V. All rights reserved.
Keywords :
Disilane , Si surface , Infrared absorption , adsorption , thermal decomposition
Journal title :
Applied Surface Science
Serial Year :
2000
Journal title :
Applied Surface Science
Record number :
996308
Link To Document :
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