Dissociative adsorption of monomethylsilane on Si 100/ as revealed by comparative temperature-programmed desorption studies on Hr, C H r, and MMSrSi 100/

Dissociative adsorption of monomethylsilane MMS., a promising precursor gas for low-temperature SiC, has been investigated on Si 100. by using temperature-programmed desorption TPD. method after its comparison with Hr and C2H2rSi 100.surfaces. For both MMSr and C2H2rSi 100., the b1 peak from SiH species showed a shift to higher temperatures in the presence of surface C atoms, while two new peaks appeared separately for the two gases: g peak ;6408C.for the C2H2r and d peak ;8708C.for the MMSrSi 100.. The g peak is suggested to be from hydrogen desorption from SiH species at which a C atom is inserted to its backbond. The d peak is related to desorption from surface CH species. The absence of the g peak on MMSrSi 100.suggests absence of atomic exchange between surface C and x substrate Si atoms on its adsorption. q2000 Elsevier Science B.V. All rights reserved.