Role of In 4=1/superstructure on the heteroepitaxy of InSb on Si 111/ substrate

Heteroepitaxial growth of InSb was performed on Si 111.- 7=7.and Si 111.–In 4=1.surface phases over a wide temperature range. We observed that In 4=1.reconstruction modifies the growth processes depending on the growth temperature. At low temperatures, it contributed mildly for the epitaxial growth and as growth temperature increases, it started degrading the quality of the films. For growth temperatures over 3008C, the In 4=1.reconstruction virtually destroys the epitaxial growth. Based on reflection high-energy electron diffraction observations, we discuss the initial stage of growth. Observed change in the growth modes is explained by the temperature-dependent modification of the In 4=1. during Sb adsorption. q2000 Elsevier Science B.V. All rights reserved