Flat-band voltage control of a back-gate MOSFET by single ion implantation

In order to control the electrical characteristics of semiconductor fine structures, several tens of single-dopant ions were implanted one by one into sub-micron semiconductor regions by means of single ion implantation SII.. The flat-band voltage of the implanted test samples a back-gate MOSFET.were measured by the extrapolation of the linear part of substrate bias VBG.–drain current ID.characteristics to VBG axis. The flat-band voltage decreased linearly with the number of implanted ions. The linear relationship between the flat-band voltage and the number of implanted ions verifies the controllability of device characteristics with the SII. The increase in the flat-band voltage per one dopant atom has been found to be y4.5 mVrion in this study. q2000 Elsevier Science B.V. All rights reserved