• Title of article

    Probing the internal structure of nanowires

  • Author/Authors

    A.B. McLean، نويسنده , , I.G. Hill، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2000
  • Pages
    5
  • From page
    620
  • To page
    624
  • Abstract
    Si 111.–In 4=1.is a fascinating quasi-1D system that contains a repeated nanowire motif. The nanowires contain only two rows of In atoms. We demonstrate that it is possible to infer the spacing between the rows from a study of the dispersion of the image state band, measured using inverse photoemission. Our analysis suggest that the rows of In atoms are separated by 4"0.5 A° . This value is in excellent agreement with estimates of the spacing by both STM and surface X-ray diffraction. q2000 Elsevier Science B.V. All rights reserved.
  • Keywords
    Semiconductor surfaces , nanowires , Atom wires , One-dimensional system , Inverse photoemission , Electronic states
  • Journal title
    Applied Surface Science
  • Serial Year
    2000
  • Journal title
    Applied Surface Science
  • Record number

    996388