Title of article
Probing the internal structure of nanowires
Author/Authors
A.B. McLean، نويسنده , , I.G. Hill، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2000
Pages
5
From page
620
To page
624
Abstract
Si 111.–In 4=1.is a fascinating quasi-1D system that contains a repeated nanowire motif. The nanowires contain only
two rows of In atoms. We demonstrate that it is possible to infer the spacing between the rows from a study of the dispersion
of the image state band, measured using inverse photoemission. Our analysis suggest that the rows of In atoms are separated
by 4"0.5 A° . This value is in excellent agreement with estimates of the spacing by both STM and surface X-ray diffraction.
q2000 Elsevier Science B.V. All rights reserved.
Keywords
Semiconductor surfaces , nanowires , Atom wires , One-dimensional system , Inverse photoemission , Electronic states
Journal title
Applied Surface Science
Serial Year
2000
Journal title
Applied Surface Science
Record number
996388
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